Pre heating implanter system for SiC MOSFET

Product Detail

Qualified in leading fabs

Mass production: 55/40/28/22/18nm

Fully recipe coverage: 

Species: B/BF2/P/As/C/N/Ge/Xe/Sb

Energy: 0.5keV ~ 60keV(80KeV option)

WAT match baseline

Yield match baseline




Pre heat E-chuck

Hot Echuck for pre-heating;

Backside gas to increase heat transfer and temperature uniformity;

High reflectivity heat shielding;

Near-infrared thermo-spectrum to monitor wafer temperature.











Process Hot E-chuck

Independently designed, with proprietary intellectual property rights;

Dual temperature zone design, with ESC temperature uniformity ≤10℃;

E-chuck heating rate ~10℃/min;

BSG thermal conductivity: Wafer temperature uniformity ≤5℃;

Wafer heating rate: ~30 sec;

C-PBN：RT ~ 600℃;