Atomic Layer Deposition Equipment

Product Detail

Adopting time-mode atomic layer deposition (T-ALD) technology, it is mainly used for the deposition of electron transport layers or buffer layers in inverted perovskite cells, depositing tin oxide / titanium oxide thin films with a thickness of 15–20 nm.、




Equipment Features：

- Capable of depositing films such as aluminum oxide / titanium oxide / tin oxide

- Unique cross-flow design for high precursor utilization

- Multi-layer high-uniformity reactor design to deliver optimal low-temperature control

- Excellent thin-film deposition uniformity with controllable edge over-deposition

- Available with large-area high-quality film preparation solutions