
It is mainly used for the deposition of hole transport layers or top electrodes in inverted perovskite cells. Adopting DC pulsed or RF plasma physical vapor deposition technology, it deposits thin films such as NiO/ITO/IZO/Cu with thickness of 15–20 nm.
Equipment Features:
- Capable of depositing various films including ITO/AZO/IZO/NiO/Cu, supporting a wide range of film materials
- Cathode design with adjustable high magnetic field intensity to achieve high target utilization
- Low sputtering damage technology to effectively protect the substrate
- High integration, available with mass-production equipment solutions at the 100 MW level
- Modular design, a scalable and customizable technology platform for future upgrades