
It is mainly used for TCO film deposition of HJT cells. Adopting DC pulsed plasma physical vapor deposition technology, it performs double-sided deposition of conductive oxide or metal thin films at approximately 110 nm.
Equipment Features:
- High-throughput design for 210 half-cells, 360 wafers per carrier, 28,800 pcs/h
- More wafers loaded along the carrier span direction, with cathode configuration reduced by 20% compared with counterparts
- Rotatable cathodes with adjustable high magnetic field intensity for high target utilization
- Supports isolated sputtering multi-layer coating with wider process window
- Equipped with automatic supporting solutions tailored for TCO processes
- Modular design, a scalable and customizable technology platform for future upgrades