Heterojunction PECVD Complete Equipment

Product Detail

It is mainly used for amorphous silicon film deposition of HJT cells. Adopting radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technology, it deposits 5–10 nm amorphous silicon/microcrystalline silicon passivation layers on the surface of textured and cleaned wafers.




Equipment Features：

- Capable of depositing intrinsic amorphous silicon / doped amorphous silicon / microcrystalline silicon / silicon oxide / silicon nitride

- Large-area multi-point RF feeding technology with adjustable electrode spacing for superior process performance

- Adopts remote plasma for in-situ automatic cleaning of chambers and carrier plates, enabling easy maintenance

- Comes with automatic supporting solutions tailored for amorphous silicon processes

- Modular design, a scalable and customizable technology platform for future upgrades