Low-pressure Phosphorus Diffusion Equipment

Product Detail

It is mainly applied to amorphous silicon film deposition for HJT solar cells. Adopting radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technology, it deposits 5–10 nm amorphous silicon/microcrystalline silicon on textured, cleaned silicon wafers.

Low-pressure boron diffusion equipment is dedicated to PN junction fabrication for N-type crystalline silicon solar cell processes including TOPCon and TBC.




Equipment Features:

- Process Compatibility: Compatible with wafer sizes up to 230 mm, supporting multiple processes including boron diffusion, oxidation, annealing and phosphorus diffusion

- Innovative Furnace Door Mechanism: Adopts flexible furnace door support mechanism and rotatable furnace door design. Furnace mouth sealing ring replacement and furnace door maintenance can be carried out without cooling down the equipment, simplifying maintenance and effectively prolonging the service life of quartz tubes and furnace body

- Excellent Anti-Corrosion Design: Anti-corrosion treatment is applied on the furnace mouth surface; no metal is exposed in the entire reaction chamber to ensure process cleanliness and passivation effect

- Rapid Cooling: Features proprietary patented rapid cooling technology, reducing the process time by over 10 minutes after high-temperature oxidation

- Wet Oxidation Process: Mature wet oxidation process improves high-temperature oxidation rate, lowers oxidation temperature and extends the service life of quartz components