
Low Pressure Chemical Vapor Deposition (LPCVD) equipment is mainly used for the deposition of poly-Si and tunnel oxide layers in TOPCon and XBC cell processes.
Equipment Features:
- Compatible with wafer sizes up to 230 mm
- Adopts cross-section temperature control technology to guarantee temperature uniformity and stability within the process zone
- Newly developed high-precision synchronous temperature control for thermal zones, annular gas inlet, gas compensation injection and other technologies to ensure thin film quality and uniformity
- Flange sealing system with double-layer water-cooled sealing structure, featuring good air tightness and longer service life of sealing rings
- Coating technology applied to substantially extend the service life of quartz tubes
- Equipped with rapid cooling function to boost equipment throughput and achieve better process performance