
Introduction:
The plasma enhanced chemical vapor deposition equipment(PECVD) is a technology that produces plasma to influence the chemical vapor deposition process with high frequency glow discharge. It is mainly suitable for the growth of anti-reflection films on the front and back of the cells in the manufacture of crystalline silicon solar cells, such as the preparation of SiNx. SiOxNy and other film layers.
Features & Advantages:
| Load per tube | 768 M10 SI wafers/ 616 M12 SI wafers |
| Heating system | Furnace body intergrated auxiliary heating, multi-stage,independent controllable auxiliary heating design, enhancing production capacity and film uniformity |
| Discharge mechanism | New motion type electrode mechanism, reducing eleetrode paddle jamming failure rate |
| New boat pushing mechanism | Enhancing the rigidity of the pushing system, Reducing paddle warpage deformation by 20%, and Increasing pushing speed by 30% |
| Energy consumption | Utilizing new Insulation materials and structures, saving 10% energy per cell compared to the previous generation model |
| Dust backfilling function | The algorithm is used to judge the pump stop in advance to reduce abnormal stop dust of the pump |