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Silicon Carbide Wafer Furnace Thermal Components by SI
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Made with highly‑purified silicon carbides, processed into large‑size (above 3 meters) and complicated shapes by specific technology.Consistent production from raw materials to finished products in own factory to realize highest quality.Used for semiconductor heat‑processing, setter for sintering electrical parts, liquid crystal producing parts, heat‑resisting and corrosion‑resisting parts.
●Semiconductor heat-processing material
●Setter for sintering electrical parts
●Parts material producing liquid crystal
●Other Heat-resisting parts and
| Item | Unit | SI |
|---|---|---|
| Composition | — | Si 18%, α‑SiC 82% |
| Bulk Density | kg/m³ | 3.02 × 10³ |
| Apparent Porosity | % | 0 |
| Allowable Temperature Limit | ℃ | 1350 |
| Young’s Modulus (RT) | GPa | 370 |
| Young’s Modulus (800℃) | GPa | 360 |
| Young’s Modulus (1200℃) | GPa | 340 |
| Poisson’s Ratio (RT) | — | 0.18 |
| Flexural Strength (3 Pt, RT) | MPa | 250 |
| Flexural Strength (800℃) | MPa | 220 |
| Flexural Strength (1200℃) | MPa | 220 |
| Coefficient of Thermal Expansion (RT~700℃) | 1/K | 3.4 × 10⁻⁶ |
| Coefficient of Thermal Expansion (700℃~1200℃) | 1/K | 4.3 × 10⁻⁶ |
| Thermal conductivity (RT) | W/mK | 220 |
| Thermal conductivity (700℃) | W/mK | 60 |
| Specific Heat (RT) | kJ/kgK | 0.70 |
| Specific Heat (700℃) | kJ/kgK | 1.23 |