Advanced Process Low-Energy Large-Beam Ion Implanter

产品介绍

made in china ion implanter system 

1. middle energy, high current  (can be used on SiC wafer) 

2. low energy , high current ,  equal to viista

3.  low energy, high current (upgraded from iStellar 500) .   equal to trident xp

please feel free to contact us for further details











ltem	Trident	Trident   XP2	Model 1	Model 2
Uniformity	0.7-1.5%(1σ）	0.6-1.0%(1σ)	0.6-1.0%(1σ)	0.6-1.0%(1σ)
Particles	≤15 @90nm	≤15 @37nm	≤10@37nm	≤5 @32nm
Angle Control≥1KeV(HBAS)	<1.0°	<0.8°	<0.8°	<0.8°
Angle Control ≥1KeV(VBAS)	N/A	<0.8°	<0.8°	<0.8°
AI Beam tune	No	No	No	Yes
Beam Tune successful rate	>80%	>90%	>95%	>95%
Tune Time	5 min avg	3.5 min avg	3.5 min avg	2.5 min avg est.
Glitch control	<10 every 2 hours	<10 every 2 hours	<10 every 2 hours	<4 every 2 hours
Quad 4 Focus	N/A	Quad 4 Focus	Quad 4 Focus	Quad 4 Focus
Collimator Rods	12 Rods	18 Rods	18 Rods	18 Rods
Q1 Lens Enhancement	N/A	Option	Option	Option
Source Lifetime	>300Hr	>400Hr	>400Hr	>500Hr
Energy Purity Module (EPM)	Standard	Reduced Rods     Serviceable	Reduced Rods     Serviceable	Reduced Rods     Serviceable
Crion (Cold)/Thermion (Hot)	Option	Option	Option	Option
Technical node	Foundry,Logic@2x     DRAM@2x     Leading   Edge NAND,CIS	Foundry,Logic @5nm &1x     DRAM@1x     Leading   Edge NAND,CIS,BCD	Foundry,Logic @5nm     DRAM@1x     Leading   Edge NAND,CIS,BCD	Foundry,Logic @3nm &5nm